71112 tkim/41509pe msim tc-00001891 no. a1445-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 EMH2308 p-channel power mosfet ? 20v, ? 3a, 85m , single emh8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? the EMH2308 incorporates a p-channel mosfet that feature low on-resistance and ultrahigh-speed switching, thereby enabling high-density mounting ? 1.8v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --20 v gate-to-source voltage v gss 10 v drain current (dc) i d -- 3 a drain current (pulse) i dp pw 10 s, duty cycle 1% --20 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.0 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7045-002 ordering number : ena1445a product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 87 6 5 12 3 4 tl 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 mh lot no. EMH2308-tl-h
EMH2308 no. a1445-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.3 v forward transfer admittance | yfs | v ds =--10v, i d =--1.5a 2.1 3.6 s static drain-to-source on-state resistance r ds (on)1 i d =--3a, v gs =--4.5v 65 85 m r ds (on)2 i d =--1.0a, v gs =--2.5v 98 137 m r ds (on)3 i d =--0.5a, v gs =--1.8v 155 235 m input capacitance ciss v ds =--10v, f=1mhz 320 pf output capacitance coss 66 pf reverse transfer capacitance crss 50 pf turn-on delay time t d (on) see speci ed test circuit. 7.1 ns rise time t r 21 ns turn-off delay time t d (off) 37 ns fall time t f 32 ns total gate charge qg v ds =--10v, v gs =--4.5v, i d =--3a 4.0 nc gate-to-source charge qgs 0.6 nc gate-to-drain ?miller? charge qgd 1.1 nc diode forward voltage v sd i s =--3a, v gs =0v --0.83 --1.2 v switching time test circuit ordering information device package shipping memo EMH2308-tl-h emh8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --1.5a r l =6.67 v dd = --10v v out v in 0v --4.5v v in EMH2308
EMH2308 no. a1445-3/7 i s -- v sd drain current, i d -- a diode forward voltage, v sd -- v sw time -- i d ciss, coss, crss -- v ds switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c source current, i s -- a i d -- v ds i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v | y fs | -- i d forward transfer admittance, | y fs | -- s it14537 it14538 --0.3 --0.4 --0.5 --0.7 --0.6 --0.8 --0.9 --1.0 --1.1 0.1 1.0 7 5 3 2 10 7 5 3 2 --0.1 --1.0 23 57 --0.01 23 57 23 57 ta= - -25 c v ds = --10v --0.01 2 3 --0.1 7 5 v gs =0v --0.01 --0.1 23 57 2 --1.0 --10 357 2 v dd = --10v v gs = --4.5v t d (on) t d (off) t f it14539 0 --6 --10 7 5 7 5 3 2 100 3 2 --14 --20 --18 --2 --4 --8 --12 --16 ciss coss crss it14540 10 2 3 7 2 5 3 3 5 100 2 7 5 ta=75 c 25 c --25 c f=1mhz 0 --2 --4 --6 --8 -- 1 -- 3 -- 5 -- 7 30 60 120 90 150 180 240 210 0 40 20 80 60 160 140 120 100 200 180 240 220 0 it14535 it14536 i d = --0.5a --3a ta=25 c --1a 75 c 25 c 2 3 --1.0 2 7 5 3 7 5 --60 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --1.8v, i d = --0.5a v gs = --4.5v, i d = --3.0a v gs = --2.5v, i d = --1.0a 357 0 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 it14533 0 --1.0 --0.4 --0.6 --0.8 --0.2 --1.2 --1.8 --1.6 --1.4 --2.2 --2.0 0 --1.0 --0.5 --1.5 --2.0 --2.5 --3.0 --3.5 --5.0 --4.5 --4.0 -- 2 5 c it14534 --2.5v --1.5v --1.8v --8v --4.5v ta=75 c v ds = --10v --10v 25 c v gs = --1.2v --3.5v t r
EMH2308 no. a1445-4/7 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a it14543 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 0.2 0.6 1.0 1.4 0 4.5 4.0 1.0 1.5 0.5 2.0 2.5 3.5 3.0 --1.0 2 3 5 7 2 3 5 7 2 3 5 5 7 2 3 --10 --0.1 --0.01 23 5 3 2 7 23 57 23 57 --0.01 --0.1 --1.0 --10 it14542 it14541 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 100 s 10ms 100ms operation in this area is limited by r ds (on). i d = --3a dc operation ( ta=25 c ) i dp = --20a v ds = --10v i d = --3a 1ms when mounted on ceramic substrate (900mm 2 0.8mm) 1unit total dissipation pw 10 s ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
EMH2308 no. a1445-5/7 embossed taping speci cation EMH2308-tl-h
EMH2308 no. a1445-6/7 outline drawing land pattern example EMH2308-tl-h mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9
EMH2308 ps no. a1445-7/7 note on usage : since the EMH2308 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
|
